The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
May. 02, 2002
Jong-Bum Park, Ichon-shi, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for manufacturing a capacitor including forming an electrode with a top portion having relatively smaller width than its bottom portion. The method includes the steps of: forming a seed layer on a semiconductor substrate; forming a first insulating layer on the seed layer; forming an opening unit which has relatively larger width in a top portion than a bottom portion by selectively etching the first insulating layer and the seed layer; forming a second insulating layer on the seed layer which is exposed after forming the opening unit; removing the first insulating layer using an etching which uses a selective etching ratio between the first insulating layer and the second insulating layer; after removing the first insulating layer, forming a bottom electrode on the exposed seed layer using an electro plating (EP) method; and removing the second insulating layer.