The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2004

Filed:

Feb. 06, 2003
Applicant:
Inventor:

Yukinobu Hikosaka, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract

A method of the present invention of manufacturing a semiconductor memory device provided with a capacitor over a semiconductor substrate, which has a lamination of a lower electrode made of a first conductive film, a capacitor dielectric film made of a dielectric film, and an upper electrode made of a second conductive film, comprises the steps of forming an insulating film, forming a capacitor on the insulating film, forming a dielectric monitor that is made of same material and has a same layer structure as the capacitor on the insulating film, measuring characteristics of the dielectric monitor in middle of a step of forming the capacitor, and evaluating the capacitor based on measured results of the characteristics of the dielectric monitor.


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