The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Mar. 19, 2002
Homi E. Nariman, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is generally directed to a method and a structure for calibrating a scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device. In one illustrative embodiment, the method comprises measuring a critical dimension of at least one production feature formed above a wafer using a scatterometry tool, measuring at least one of a plurality of grating structures formed above the wafer using the scatterometry tool, each of the grating structures having a different critical dimension, and correcting the measured critical dimension of the at least one production feature based upon the measurement of the at least one grating structure. In further embodiments, the method comprises forming a plurality of production features above a wafer, forming a plurality of grating structures above the wafer, each of the grating structures comprised of a plurality of features each having a target critical dimension that thereby defines a critical dimension of the grating structure, each of the grating structures having a different critical dimension, measuring a critical dimension of at least one of the production features using a scatterometry tool, measuring at least one of the grating structures using the scatterometry tool to determine a measured critical dimension of at least one feature of the at least one grating structure, and correcting the measured critical dimension of the at least one production feature based upon a comparison between the measured critical dimension of the at least one feature on the at least one grating structure and the target critical dimension of the feature on the at least one grating structure.