The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2004

Filed:

Dec. 30, 2002
Applicant:
Inventor:

Kang-Youl Lee, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01H 3/776 ;
U.S. Cl.
CPC ...
H01H 3/776 ;
Abstract

An antifuse circuit serves to generate an antifuse enable signal for use in repairing a defected memory cell in a semiconductor device. The inventive antifuse includes: an antifuse unit employing an antifuse, wherein the antifuse is controlled as being shorted or insulated according to a repair program; an antifuse precharge unit for precharging the antifuse by using a predetermined voltage level in response to a power-up signal, wherein the predetermined voltage level is lower than that of an external voltage source; and an output latch unit driven by the predetermined voltage level for latching a antifuse voltage level appearing on the antifuse and generating the antifuse enable signal corresponding to the antifuse voltage level.


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