The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Mar. 18, 2003
Kirk S. Giboney, Santa Rosa, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
An enhanced extended drift heterostructure (EEDH) photodiode and method of making provide enhanced electron response. The EEDH photodiode includes adjacent first and second light absorption layers, an ohmic anode contact interfaced to the first layer and a cathode contact interfaced to the second layer. The cathode contact includes either a Schottky cathode contact or an ohmic cathode contact and a contact layer. The EEDH photodiode optionally further includes one or more of a carrier block layer interfaced to the first layer, a graded characteristic in the first layer, and a collector layer interfaced to the second layer. The first layer has a doping concentration that is greater than doping concentrations of the second layer and the optional collector layer. The first and second layers have band gap energies that facilitate light absorption. The optional layers have band gap energies that are relatively nonconducive to light absorption.