The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Jul. 11, 2001
Takasuke Hayase, Tokyo, JP;
Hiroaki Tanaka, Tokyo, JP;
Shusaku Kido, Kagoshima, JP;
Toshihiko Harano, Kagoshima, JP;
NEC LCD Technologies, Ltd., Kanagawa, JP;
Abstract
The photolithography processes for connecting the first conductive film pattern, which is a lower layer such as a gate electrode of a TFT, to a second conductive film pattern, which is an upper layer such as a source/drain electrode of a TFT are reduced by utilizing laminated films and a resist pattern formed thereon having different film thicknesses. Laminated films constituting the source/drain electrode are formed by depositing films on an insulating substrate on which the first conductive film pattern is formed, and the resist pattern is formed on the top layer of the laminated films, and then utilizing the film thickness difference of the resist pattern and the film composition of the laminated films, the short circuited wiring between the gate electrode and the source/drain electrode for an Electro-Static-Discharge protection circuit of the active matrix substrate can be formed by less photolithography processes than that in the manufacturing of the conventional active matrix substrate.