The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Nov. 26, 2002
Nippon Steel Corporation, Tokyo, JP;
Abstract
There is provided a process for fabrication of a SIMOX substrate wherein oxygen ions are implanted into a single crystal silicon substrate and then subjected to a high-temperature heat treatment to form a buried oxide layer and a surface single crystal silicon layer, wherein the single crystal silicon substrate used has a mean resistivity of 100 &OHgr;cm or greater, and there is conducted a step of maintaining a temperature of from 800° C. to 1250° C. for a predetermined time in the final stage of the high-temperature heat treatment, as well as a SIMOX substrate wherein the mean resistivity of the substrate obtained by the process is 100 &OHgr;cm or greater.
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