The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Sep. 06, 2002
Yoshifumi Yoshida, Chiba, JP;
Miwa Wake, Chiba, JP;
Seiko Instruments Inc., Chiba, JP;
Abstract
A semiconductor integrated circuit is provided in which a change in timing of a circuit or variation in a driving ability do not occur even if the potential of a support substrate is fixed. The method of manufacturing a semiconductor integrated circuit according to the present invention includes: forming a contact hole in a source-body-tie region of a transistor so that the contact hole reaches a part of the support substrate through a semiconductor film and a buried insulating film on the support substrate; forming a thermal oxide film; forming an impurity region of a second conductivity in a region where a transistor of a first conductivity is to be formed, which reaches the buried insulating film on the semiconductor film; forming an impurity region of a second conductivity in a portion on the support substrate and opposing the impurity region of a second conductivity with respect to the insulating film; and etching an interlayer insulating film so as to be concentric with the contact hole and to have a size surrounding the contact hole.