The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2004

Filed:

Jul. 26, 2002
Applicant:
Inventor:

Philippe Helin, Grenoble, FR;

Assignee:

MEMSCAP, , FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ; H01L 2/1461 ; H01L 3/10232 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ; H01L 2/1461 ; H01L 3/10232 ;
Abstract

A process for fabricating a microelectromechanical optical component from a silicon substrate is disclosed. The component comprises optical propagation guides; a wall which can move with respect to the propagation guides; and an electrostatic actuator associated with return means formed by at least one beam capable of causing the moving wall to move with respect to the rest of the substrate. The substrate is single-crystal silicon having (111) crystallographic planes parallel to the plane of the substrate. The process comprises a first series of deep reactive ion etching steps during which the heights of the moving wall, of the electrodes of the actuator, and of the beams of the return means of the actuator are defined with different values, and a second wet etching step, making it possible to free the moving wall, the electrodes and the beams from the rest of the substrate.


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