The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Oct. 18, 2002
Qi Hua Fan, Ann Arbor, MI (US);
Li Qin Zhou, Ann Arbor, MI (US);
Other;
Abstract
The present invention discloses a novel rectangular sputtering magnetron cathode that significantly improves target utilization and sputtering efficiency. Different from conventional magnatron design that considers only magnetic field distribution and is, therefore, qualitive or empirical, the present magnetron cathode is developed through computer-aided simulation of plasma discharge. The magnetic and electric fields are optimized in a combined manner by quantitatively simulating electron trajectories, electron/Ar collisions, space charge distribution, and target erosion profile. Sputtering tests with Cu target show a target utilization of 55%˜65%, much higher than conventional target utilization which is about 40%. Meanwhile, high sputtering efficiency is achieved by maintaining a relatively strong magnetic field over the surface of the target, which can be thicker than 12 mm, as a result of effective confinement of high-energy electrons.