The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jul. 16, 2001
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser device ( ) includes a layered structure formed on an n-type GaAs substrate ( ) having a bandgap energy Eg and including an n-type AlGaAs cladding layer ( ), an active layer ( ) including a quantum-well structure of two layers InGaAs/GaAs having a bandgap energy Eg which is smaller than Eg , a p-type AlGaAs cladding layer ( ), and a p-type GaAs cap layer ( ), which are consecutively epitaxially grown. The cap layer and the upper portion of the p-type cladding layer are formed as a stripe-shaped mesa structure. An SiN passivation film ( ) is formed on the areas except for the top of the cap layer. On the exposed cap layer and the passivation layer a p-side electrode ( ) is formed. On the bottom surface of the substrate an n-side electrode ( ) including layered metal films of In/AuGe/Ni/Au is formed. An absorption medium layer is interposed between the GaAs substrate and the n-side electrode.