The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jun. 13, 2002
Applicant:
Inventors:
Daisuke Morita, Anan, JP;
Motokazu Yamada, Anan, JP;
Assignee:
Nichia Corporation, Tokushima, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/03 ; G02F 1/07 ; H01L 2/9201 ; H01L 2/916 ; H01L 2/918 ;
U.S. Cl.
CPC ...
G02F 1/03 ; G02F 1/07 ; H01L 2/9201 ; H01L 2/916 ; H01L 2/918 ;
Abstract
To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of In Ga N (x >0) containing In and a first barrier layer made of Al Ga N (y >0) containing Al formed on the well layer.