The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2004

Filed:

Jun. 26, 2000
Applicant:
Inventor:

Praveen Muraleedharan Shenoy, Wilkes-Barre, PA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ; H01L 2/9167 ; H01L 2/936 ;
U.S. Cl.
CPC ...
H01L 3/1075 ; H01L 2/9167 ; H01L 2/936 ;
Abstract

A semiconductor diode includes a first semiconductor layer including a dopant having a first conductivity type. A second semiconductor layer is adjacent the first semiconductor layer and includes a dopant having the first conductivity type and having a dopant concentration less than a dopant concentration of the first semiconductor layer. Adjacent the second semiconductor layer is a third semiconductor layer including a dopant having the first conductivity type and having a dopant concentration greater than the dopant concentration of the second semiconductor layer. A fourth semiconductor layer is adjacent the third semiconductor layer and includes a dopant of a second conductivity type. Respective contacts are connected to the first and fourth semiconductor layers.


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