The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Dec. 20, 1999
Applicant:
Inventor:
Alberto Oscar Adan, Ikoma, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1119 ;
Abstract
A semiconductor device including an insulating film, a plurality of word lines parallel to one another, a gate insulating film and a first conductivity type semiconductor layer that are formed in this order, wherein the surface of said insulating film is rendered flat with respect to the surface of the word lines, and the first conductivity type semiconductor layer includes bit lines comprising a plurality of second conductivity type high concentration impurity diffusion layers crossing the word lines and parallel to one another.