The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Sep. 12, 2000
Toshiyuki Takemori, Hanno, JP;
Yuji Watanabe, Hanno, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A technique is provided which makes it possible to reduce the area of a power MOSFET. A power MOSFET according to the invention is a trench type in which a source region is exposed on both of a substrate top surface and an inner circumferential surface of a trench . Since this makes it possible to provide contact between the source region and a source electrode film not only on the substrate top surface but also on the inner circumferential surface of the trench , source contact is provided with a sufficiently low resistance only on the substrate top surface, and the area of the device can be made smaller than that in the related art in which the source region has been formed in a larger area.