The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Dec. 30, 2002
Applicant:
Inventor:
Jong Su Kim, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/1366 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/1366 ;
Abstract
The present invention discloses a method for manufacturing a semiconductor device. A device isolation film has a shape of an insulating spacer at an interface of active regions composed of a epitaxial silicon layer in a device isolation region of a semiconductor substrate and active regions composed of a semiconductor substrate, thereby minimizing a size of the device isolation region, maximizing a size of the active regions, and achieving a high integration of the device.