The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Feb. 06, 2003
Takahiro Baba, Yokohama, JP;
Koichi Sakamoto, Yokohama, JP;
Shigeyuki Mikami, Yokohama, JP;
Hiroyasu Matsuzaki, Yokohama, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.