The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jun. 28, 2002
Applicant:
Inventors:
Po-Hao Tsai, Banchinu, TW;
Nai-Hao Kuo, Kaonsiung, TW;
Wen-Jiun Liu, Miaoli, TW;
Yuh-Wen Lee, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
A method for forming amorphous silicon films with low defect density on single crystal silicon substrates and structures formed. The method is carried out by first providing a single crystal silicon substrate, then depositing a buffer layer by a material such as silicon oxide, silicon nitride, silicon carbide or a metal on top of the single crystal silicon substrate. An amorphous silicon film of substantial thickness, i.e. of thicker than 1 &mgr;m, is then deposited on top of the buffer layer achieving a smooth top surface.