The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Jun. 12, 2002
Takaharu Kondo, Kyoto, JP;
Masafumi Sano, Kyoto, JP;
Akira Sakai, Kyoto, JP;
Tadashi Sawayama, Kyoto, JP;
Ryo Hayashi, Nara, JP;
Shuichiro Sugiyama, Kyoto, JP;
Hiroyuki Ozaki, Kyoto, JP;
Yoshinori Sugiura, Kyoto, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V than the ground potential; the V satisfying |V |≦|V |≦50×|V |, where V is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile