The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Apr. 05, 2002
Ronald P. Boisvert, Midland, MI (US);
Duane R. Bujalski, Auburn, MI (US);
Brian R. Harkness, Midland, MI (US);
Zhongtao Li, Midland, MI (US);
Kai Su, Midland, MI (US);
Bianxiao Zhong, Midland, MI (US);
Dow Corning Corporation, Auburn, MI (US);
Abstract
Herein is disclosed a resin solution, comprising (a) about 0.1 solids wt % to about 50 solids wt % of an organosiloxane resin comprising the formula (RSiO ) (R′SiO ) , wherein R is selected from the group consisting of C -C alkyl, C -C alkenyl, C -C alkoxy, C -C alkenoxy, and C -C substituted hydrocarbon; R′ is selected from the group consisting of —H, C -C unsubstituted hydrocarbon, and C -C substituted hydrocarbon; x is from about 5 mole % to about 75 mole %; y is from about 10 mole % to about 95 mole %; and x+y is at least about 40 mole %; and (b) about 50 solids wt % to about 99.9 solids wt % of a resin comprising at least about 90 mole % of the formula HSiO . Also disclosed herein is a method of preparing such a resin solution, as well as a method of preparing a solid coating, comprising (i) coating the resin solution on a surface; (ii) removing the solvent from the resin solution; (iii) removing R groups from the organosiloxane resin; and (iv) curing the resin solution, to form the solid coating. Coatings prepared from the resins disclosed herein have relatively low dielectric constants and also have relatively low SiH content and relatively high modulus.