The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Jan. 02, 2001
Dong Woo Shin, Kyoungki-do, KR;
Hyundai Electronics Industries, Kyoungki-Do, KR;
Abstract
This Rambus DRAM has a power save function which is not restricted in using time and has a short setting time, by forcibly compensating for a lost capacitor value in a memory cell to have a predetermined value, when a power save mode is changed to a normal mode. The Rambus DRAM includes: a memory core unit having a plurality of memory cells and a refresh counter; a packet controller for analyzing a packet control signal applied from an external channel, and generating a control signal for controlling a power mode; a power mode controller for generating each power mode signal and a self refresh enable signal for controlling the operation of the refresh counter according to the control signal; and a delay locked loop controlled according to the power mode signals, for adjusting a phase difference between a clock signal applied from the external channel and a clock signal used in a semiconductor memory device, generating to the power mode controller a signal notifying that the mode can be changed to a normal mode, and compensating for a current value lost in a capacitor of the memory cell.