The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Mar. 08, 2001
Tetsuhiro Tanabe, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Rohm, Co., Ltd, Kyoto, JP;
Abstract
On the surface of a conductive substrate ( ) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion ( ) that has at least an n-type layer ( ) and a p-type layer ( ) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer ( ) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.