The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6735113 B1

PDF
Full Text
Expired
Date of Patent:
May. 11, 2004

Filed:

Oct. 15, 2002
Applicant:
Inventors:

Sei-Seung Yoon, Cupertino, CA (US);

Seong-Ook Jung, Cupertino, CA (US);

Assignee:

T-Ram, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/134 ;
U.S. Cl.
CPC ...
G11C 1/134 ;
Abstract

The present invention provides a circuit and a method for providing nondestructive write operations and optimized memory access operations with reduced power consumption during memory access, such as during write operations. In one embodiment, a memory device comprises a memory cell configured to store a first data bit. The memory device also comprises a write access circuit coupled to the memory cell for providing a write data bit having a write data bit magnitude. The write access circuit is configured to adjust the write data bit magnitude to an intermediate logic state magnitude in a memory operation.


Find Patent Forward Citations

Yoon, Sei-Seung. (2004). Circuit and method for implementing a write operation with tcct-based memory cells (U.S. Patent No. 6735113). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6735113

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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