The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Dec. 19, 2002
Larry Leighton, Scottsdale, AZ (US);
Prasanth Perugupalli, Gilbert, AZ (US);
Nagaraj V. Dixit, Gilbert, AZ (US);
Gordon C. Ma, Phoenix, AZ (US);
Infineon Technologies North America Corp., Iselin, NJ (US);
Abstract
Conventional broadband RF power amplifiers use a ¼ wavelength transmission line to decouple the gate bias DC source from the gate circuitry and a second ¼ wavelength transmission line to decouple the drain bias DC source from the drain circuitry, taking up considerable printed circuit board space. A novel broadband RF power amplifier uses a transistor with separate terminals for injection of gate bias and drain bias DC sources, eliminating the need for ¼ wavelength transmission lines, thereby freeing up space and allowing higher density packaging. The power amplifier transistor can be implemented with a single die circuit or multiple die circuits operating in parallel.