The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Jun. 05, 2002
Applicant:
Inventor:
Yuzaburo Ban, Hirakata, JP;
Assignee:
Matsushita Electric Industries Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/904 ; H01L 3/1036 ;
U.S. Cl.
CPC ...
H01L 2/904 ; H01L 3/1036 ;
Abstract
A GaN-based compound semiconductor epi-wafer includes: a substrate made of a first nitride semiconductor belonging to a hexagonal system; and an element layer for forming a semiconductor element, which is made of a second nitride semiconductor belonging to the hexagonal system and which is grown on a principal surface of the substrate . An orientation of the principal surface of the substrate has an off-angle in a predetermined direction with respect to a (0001) plane, and the element layer has a surface morphology of a stripe pattern extending substantially in parallel to the predetermined direction.