The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Dec. 01, 1999
Applicant:
Inventors:
Atsushi Ogishima, Tachikawa, JP;
Kiyonori Ohyu, Ome, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract
In a semiconductor integrated circuit device having a memory cell which includes a MIS.FET and a capacitance element, the conductivity type of a low-resistance polysilicon film which constitutes the gate electrode ( ) of the memory cell selecting MIS.FET (Q) of n-channel type constituting the memory cell is set at p -type in order to enhance the refresh characteristics of the memory cell.