The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Sep. 17, 1999
Joel N. Schulman, Malibu, CA (US);
David H. Chow, Newbury Park, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A method for producing laterally varying multiple diodes and their device embodiment are presented herein. As demonstrated, multiple resonant tunneling diodes are fabricated together utilizing a single epitaxial structure. Shallow, ion-implanted regions having varying depths, d , define the collector contacts. Each diode is isolated electrically from the others by methods such as conventional mesa etching into the emitter layer. The varying depths, d , provide means for varying the peak voltage of each individual diode. The peak voltage strongly depends on the depths, d , because it comprises a space charge region where the electric field is high, and therefore the voltage drop is high. The invention disclosed herein is useful in applications such as high-speed circuits such as comparators, analog to digital converters, sample and hold circuits, logic devices, and frequency multipliers.