The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Jun. 25, 2001
Applicant:
Inventors:
Kwon Hong, Ichon-shi, KR;
Hyung-Bok Choi, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/976 ;
Abstract
The present invention provides a semiconductor memory device and a fabrication method capable of preventing the contact between a dielectric layer of a capacitor and a diffusion barrier. The plug comprises a diffusion barrier layer and a seed layer for forming a lower electrode of a capacitor. Accordingly, it is possible to prevent the dielectric layer being contacted with the diffusion barrier, whereby the leakage current may be reduced, and the capacitance of the capacitor may be increased.