The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Aug. 16, 2002
Applicant:
Inventor:
Allan S. Myerson, Chicago, IL (US);
Assignee:
Illinois Institute of Technology, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/102 ;
U.S. Cl.
CPC ...
C30B 2/102 ;
Abstract
A method for the high-throughput non-photochemical laser induced nucleation of crystals from aged supersaturated solutions in which short high-intensity laser pulses are used to induce nucleation in an array or sequence aged supersaturated solutions. The laser reduces nucleation time and induces nucleation only in the area where the beam is focused or passes through, resulting in fewer nuclei than would be achieved by spontaneous nucleation. The high-throughput methodologies allow more crystals to grow in a given amount of time.