The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Jun. 27, 2002
Applicant:
Inventors:
Gobi R. Padmanabhan, Sunnyvale, CA (US);
Visvamohan Yegnashankaran, Redwood City, CA (US);
Reda Razouk, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
The drain-to-source field leakage current and the device-to-device field leakage current that are caused by radiation-induced hole trapping in the field oxide region are reduced in the present invention by forming the source and drain regions a distance apart from the edge of the field oxide region.