The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Sep. 27, 2002
Xunhu Dai, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An exemplary composition of matter and method for making high-efficiency, low-loss capacitors is disclosed as including inter alia a B O —Bi O —ZnO glass in admixture with material typically comprising about 30-40 wt % cubic phase (Bi Zn )(Zn Nb )O and about 60-70 wt % pseudo-orthorhombic phase Bi (Zn Nb ) O (e.g., “BZN”). The mixture effectively reduces the sintering temperature of BZN from the range of about 950-1050° C. to the range of about 850-900° C., thereby rendering BZN suitable for cofiring with, for example, existing LTCC dielectrics. Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize the sintering temperature of BZN and/or BZN-based materials. Exemplary embodiments of the present invention representatively provide for embedded high-efficiency, low-loss capacitors that may be readily integrated with existing portable ceramic technologies for the improvement of dielectric properties, device package form factors, weights and/or other manufacturing, device or material performance metrics.