The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Nov. 03, 2000
Misbahul Azam, Gilbert, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
Christopher J. Gass, Tempe, AZ (US);
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
A masking material ( ) is formed on a foundation layer ( ) and a substrate ( ). A mask ( ) is disposed onto the masking material ( ) where a trench ( ) is desired to be formed. An etch step removes all of the masking material ( ) except at regions where the mask ( ) was formed leaving a protruding portion ( ) with an opening ( ) on either side. An epi layer ( ), is grown on the foundation layer ( ) adjacent to the protruding portion ( ) in the opening ( ). A wet oxide etch process is used to remove the protruding portion ( ) leaving a trench ( ) formed in the epi layer ( ). To complete the process, a silicon wet etch process is used to round off the corners at an edge ( ) of the trench ( ).