The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Dec. 06, 2001
Yoshihisa Saimoto, Aichi, JP;
Yasuhisa Fujii, Chiba, JP;
Makoto Kataoka, Aichi, JP;
Kentaro Hirai, Miyagi, JP;
Hideki Fukumoto, Aichi, JP;
Takanobu Koshimizu, Aichi, JP;
Mitsui Chemicals, Inc., Tokyo, JP;
Abstract
This invention aims to provide a protecting method for a semiconductor wafer which can prevent breakage of a semiconductor wafer even when a semiconductor wafer is thinned to a thickness of 200 &mgr;m or less, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method. According to this invention, there is provided a protecting method for a semiconductor wafer comprising a first step of adhering a surface protecting adhesive film for a semiconductor wafer to a circuit-formed surface of the semiconductor wafer, a second step of processing a non-circuit-formed surface of the semiconductor wafer and a third step of adhering a bonding film for die bonding to the non-circuit-formed surface of the semiconductor wafer, characterized in that the third step is performed without peeling the surface protecting adhesive film for the semiconductor wafer, and an adhesive film in which an adhesive layer is formed on one surface of a substrate film at least one layer of which is made of a resin having a melting point of 200° C. or more is used, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method.