The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Dec. 20, 2001
Applicant:
Inventor:
Richard Schinella, Saratoga, CA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
The present invention provides a method of forming SiGe gate electrodes using a thin nucleation layer. A dielectric layer is formed on a semiconductor wafer and a thin silicon nucleation layer deposited on top of the dielectric layer. A SiGe conducting film is deposited on the patterned silicon layer. The ratio of germanium to silicon in the gaseous source mixture for the silicon and germanium layer is selected so that the SiGe conducting film deposits on the nucleation layer but fails to deposit on the dielectric.