The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Jul. 10, 2001
Chihiro Arai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device having a bipolar transistor which is capable of high integration, and a semiconductor device in which the bipolar transistor has good characteristic properties. A process for producing said semiconductor device. The process consists of forming the electrode layer which covers the base region between the emitter and the collector and which connects to the semiconductor base through the opening formed in the insulating film at the part connecting to the base of the lateral bipolar transistor; forming from the same insulating film the side walls on the flanks of the gate electrode of the MOS transistor and the insulating film covering the base region between the emitter and the collector of the lateral bipolar transistor; forming the gate electrode of the MOS transistor; forming the insulating layer over the entire surface; forming the layers which cover, functioning as a mask, the base region between the emitter and the collector of the lateral bipolar transistor; and etching the insulating film, thereby forming the side wall for the gate electrode.