The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Dec. 06, 2002
Zhiqiang Wu, Plano, TX (US);
Che-Jen Hu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit device ( ) including a first transistor (PMOS) of a first conductivity type and a second transistor (NMOS) of a second conductivity type that is complementary to the first conductivity type. The method includes the steps of forming a first gate stack ( ), the first transistor including the first gate stack and forming a second gate stack ( ), the second transistor including the second gate stack. The method further includes implanting a first drain extension region ( ) at a first distance relative to the first gate stack, the first transistor including the first drain extension region, and the method includes implanting a second drain extension region ( ) at a second distance relative to the second gate stack, the second transistor including the second drain extension region. The first distance is greater than the second distance.