The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Nov. 08, 2002
Applicant:
Inventors:
Koji Morimoto, Tokyo, JP;
Kouki Sato, Tokyo, JP;
Masahito Morimoto, Tokyo, JP;
Kazuhiro Toriumi, Nagano, JP;
Taichi Tsuchiya, Nagano, JP;
Assignee:
The Furukawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
The silicon substrate is masked on one surface of the silicon substrate where structures like combs and beams of comb drive are not to be formed on the other surface. The unmasked areas are then etched followed by masking areas on the other surface corresponding to the structures. Finally, the unmasked areas on the other surface are again etched by anisotropic reactive ion etching to form the structures.
Morimoto, Koji. (2004). Silicon device manufacturing method, silicon device, and optical component (U.S. Patent No. 6730535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6730535
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile