Highly adaptable heterogeneous power amplifier ic micro-systems using flip chip and micromechanical technologies on low loss substrates

Abstract

A first MEM is mounted on a substrate having a first contact and a second contact is mounted on a substrate. A PA power cell is thermally connected to the substrate using a thermal bump. The power cell is electrically insulated from the substrate. The power cell has a first power cell bump and a second power cell bump as pathways for I/O functions. A first insulator is mounted on the substrate supporting a second MEM above the substrate. The second MEM has a first connection and a second connection The first connection and the second connection are located on a bottom surface of the second MEM. A first conductive via vertically traverses the first insulator and is connected to the first connection from the second MEM. This first conductive via is further connected to a first conductor. The first conductor is insulated from substrate by a first insulating layer. The first conductor is further connected to the first power cell bump. A second conductor is insulated from the substrate by a second insulating layer. The second conductor is connected to a second conductive via. The second conductive via traverses vertically a second insulator. The second conductive via is connected to a first metal member. The first metal member is formed over the upper surface of the second insulator and connected to a first input to the first MEM switch. A second metal member is connected to the second contact of the first MEM switch. The second metal member is formed over the upper surface of a third insulator. The third insulator is positioned over the substrate.