The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Mar. 25, 2002
Yoshihiro Takao, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Each of a plurality of repeating units comprises a plurality of memory cells. A second-conductivity-type well is formed in a surface layer of a semiconductor substrate extending over the plurality of the repeating units. In the second-conductivity-type well, first-conductivity-type channel MOS transistors of the plurality of the repeating units are provided. A second-conductivity-type well tap region is formed in one of the memory cells in each repeating unit and in the second-conductivity-type well. In the memory cell provided with the second-conductivity-type well tap region or in the memory cell adjacent thereto, an interlayer connection member is provided. The interlayer connection member is connected to the source region of one of the first-conductivity-type channel MOS transistors and to the corresponding second-conductivity-type well tap region.