The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2004

Filed:

Dec. 02, 1999
Applicant:
Inventor:

Hae Chang Yang, Chungcheongbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/662 ;
U.S. Cl.
CPC ...
H01L 3/662 ;
Abstract

ESD protection circuit and method for fabricating the same, which has an improved performance, the method including the steps of (1) forming a transistor on a substrate, (2) forming a first insulating film on the substrate inclusive of the transistor and having a first contact hole to an input terminal of the transistor, (3) forming a buffered layer in the first contact hole and the first insulating film in the vicinity of the first contact hole, (4) forming a second insulating film on the first insulating film inclusive of the buffered layer and having a second contact hole to the buffered layer, and (5) forming a pad both on the second contact hole and the second insulating film in the vicinity of the second contact hole.


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