The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Aug. 07, 2001
Dong-jin Jung, Kyungki-do, KR;
Ki-nam Kim, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing a semiconductor device including a ferroelectric capacitor is provided. A conductive plug is formed in a first insulating layer on a semiconductor substrate. A first lower metal layer is formed overlying the conductive plug. A lower metal oxide layer is formed on the first lower metal layer. A second lower metal layer is formed on top of the lower metal oxide layer. A ferroelectric layer is formed from a ferroelectric material on the lower electrode layer at a crystallizing temperature of approximately 700° C. A first upper metal layer is formed on top of the ferroelectric layer. Thereafter, a heat treatment higher than the crystallizing temperature is performed. An upper metal oxide layer is formed on top of the first upper metal layer. A second upper metal layer is formed on top of the upper metal oxide layer.