The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Dec. 07, 2000
Applicant:
Inventors:
Srinath Krishnan, Campbell, CA (US);
Witold P. Maszara, Morgan Hill, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of making a Silicon-on-Insulator (SOI) transistor includes forming a body layer that is fully depleted when the SOI transistor is in a conductive state and forming first p regions adjacent each of the SOI transistor source/drain regions to adjust the SOI transistor threshold voltage. To suppress punch-through current, an additional implant step is carried out to form second p regions adjacent first implant regions.