The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Oct. 29, 2002
Oleg Gluschenkov, Wappingers Falls, NY (US);
Suryanarayan G. Hegde, Hollowville, NY (US);
Helmut H. Tews, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Forming a vertical MOS transistor or making another three-dimensional integrated circuit structure in a silicon wafer exposes planes having at least two different crystallographic orientations. Growing oxide on different crystal planes is inherently at different growth rates because the inter-atomic spacing is different in the different planes. Heating the silicon in a nitrogen-containing ambient to form a thin layer of nitride and then growing the oxide through the thin nitrided layer reduces the difference in oxide thickness to less than 1%.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile