The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Dec. 28, 2000
Applicant:
Inventor:
Vickram Vathulya, Ossining, NY (US);
Assignee:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04D 1/16 ;
U.S. Cl.
CPC ...
H04D 1/16 ;
Abstract
A MOSFET amplifier includes a pre-amplifier stage and a power amplifier stage. The pre-amplifier is a CMOS inverter having a signal output that is DC connected to the gate of a MOS control transistor of the power amplifier stage. The CMOS inverter includes an NMOS transistor with a source connected through an inductor to ground and a drain to the source of a PMOS transistor. The drain of the PMOS transistor is connected through another inductor to a supply voltage. The gates of the NMOS and PMOS transistors are connected to both receive an input signal of the amplifier.