The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Jun. 16, 2000
Sang Ho Moon, Seoul, KR;
In Kyou Choi, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
Solid state image sensor suitable for enhancing sensitivity of charge coupled devices (CCDs) using phase shift of light, and method for fabricating the same, the solid state image sensor including a plurality of photodiodes for generating image charges from incident lights, a plurality of charge coupled devices provided between the photodiodes for transmitting the image charges in one direction, a first flat layer formed on an entire surface of the photodiodes and the charge coupled devices, a plurality of color filter layers formed on the first flat layer to be in correspondence to the photodiodes, a plurality of black layers formed on the first flat layer between the color filter layers, a plurality of phase shift layers selectively formed on the color filter layers to be in correspondence to the photodiodes alternately, a second flat layer formed on an entire surface including the phase shift layers, and a plurality of microlenses formed on the second flat layer to be in correspondence to the photodiodes.
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