The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2004

Filed:

Jul. 24, 2001
Applicant:
Inventor:

John R. Cutter, Macclesfield, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/329 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/329 ;
Abstract

Thermal cycling can lead to damaging stress at the upper surface of a semiconductor device chip ( ) encapsulated in synthetic resin material ( ), particularly in the case of power devices that include an IC. The invention provides a thick ductile layer pattern ( ) of, for example, aluminium over most of the top surface of the insulating over-layer ( ) of the chip ( ). Electrically-isolated parts ( etc.) of this ductile covering are individually connected to respective underlying conductive areas so as to reduce charging effects across the insulating over-layer ( ). A sufficient spacing Z is present between these isolated parts ( etc.) to avoid short circuits as a result of deformation by shearing and smearing during thermal cycling of the device. The ductile metal layer pattern ( ) reduces stress between the insulating material ( ) and the plastic material ( ), but it can be both easily and cheaply applied in device manufacture before dividing the wafer into individual chips.


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