The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Aug. 22, 2002
Sankara Narayanan Ekkanath Madathil, Leicester, GB;
De Montfort University, Leicestershire, GB;
Abstract
There is disclosed a semiconductor device comprising: at least one cell comprising a base region ( ) of a first conductivity type having disposed therein at least one emitter region ( ) of a second conductivity type; a first well region ( ) of a second conductivity type; a second well region ( ) of a first conductivity type; a drift region ( ) of a second conductivity type; a collector region ( ) of a first conductivity type; a collector contact ( ) in which each cell is disposed within the first well region ( ) and the first well region ( ) is disposed within the second well-region ( ); the device further comprising: a first gate ( ) disposed over a base region ( ) so that a MOSFET channel can be formed between an emitter region ( ) and the first well region ( ); the device further comprising: a second gate disposer over the second well region ( ) so that a MOSFET channel can be formed between the first well region ( ) and the drift region ( ).