The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Feb. 05, 2002
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone ( ) between a first ( ) and second ( ) device regions adjacent to respective first and second opposite surfaces ( ) of a semiconductor body . Trenched field-shaping regions ( ) including a resistive path ( ) extend through the voltage-sustaining zone ( ) to the underlying second region ( ), so as to enhance the breakdown voltage of the device. The voltage-sustaining zone ( ) and the trenched field-shaping regions ( ) are present in both the active device area (A) and in the peripheral area (P) of the device. A further resistive path ( ) extends across the first surface ( ), outwardly over the peripheral area (P). This further resistive path ( ) provides a potential divider that is connected to the respective resistive paths ( ) of successive underlying trenched field-shaping regions ( ) in the peripheral area (P). Thereby a gradual variation is achieved in the potential (V ) applied by the successive trenched field-shaping regions ( ) in the peripheral area (P) of the voltage-sustaining zone ( ). This advantageous peripheral termination reduces device susceptibility to deviations in the field profile in this peripheral area (P).