The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2004

Filed:

Dec. 15, 2000
Applicant:
Inventors:

Chan Lim, Ichon-shi, KR;

Kyong-Min Kim, Ichon-shi, KR;

Yong-Sik Yu, Ichon-shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

A method for manufacturing an aluminum oxide film for use in a semiconductor device, the method including the steps of preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber, supplying an aluminum source material and NH gas into the reaction chamber simultaneously for being absorbed on the semiconductor substrate, discharging unreacted MTMA or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging, supplying an oxygen source material into the reaction chamber for being absorbed on the semiconductor substrate, and discharging unreacted oxygen source or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging.


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