The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Sep. 25, 2001
Applicant:
Inventor:
Sang Hoon Park, Kyoungki-do, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1425 ;
Abstract
The present invention relates to a pinned photodiode used in a CMOS image sensor. The pinned photodiode according to the present invention has an uneven surface for increasing an area of a PN junction of the photodiode. So, the increased PN junction area improves a light sensitivity of the photodiode. That is, the epitaxial layer, in which the photodiode is formed, has a trench or a protrusion. Also, in the pinned photodiode, since the P diffusion layer is directly in contact with the P-epi layer, the two P-type layers have the same potential and then it may operate in a low voltage.